Micron introduces UFS 4.0 storage technology, which is twice as quick as earlier storage

As per some recent pieces of information, Micron has introduced a new UFS 4.0 mobile storage solution. Reportedly, the company has even supplied a few initial samples to selected international smartphone companies and chipset retailers.

When the new tech will become available?

In addition to this, the new tech will help facilitate the manufacturing of storage in 256GB, 512 GB, and 1Tb capacities, respectively. The company will begin mass production by H2 2023. It indicates that it will take some time for smartphones to arrive in the market based on Micron UFS 4.0 storage.

Design and efficiency of the Micron UFS 4.0 storage solution

When it comes to the design and overall structure of the storage, it is based on 232-layer TLC flash (triple-level cells, i.e., storing 3 bits per cell). The company claims that its six-plane NAND architecture allows for increased random read throughput. In contrast to the last generation storage, the write bandwidth is 100% higher and the read bandwidth is 75% higher.

The sequential read and write speeds of Micron’s UFS 4.0 storage are up to 4,300 MBps and 4,000 MBps, respectively. Do notice the write rating of the UFS 4.0 storage solution is better than Samsung’s UFS 4.0. The new UFS 4.0 chips also offer a 10% lower write latency and a 25% increase in power efficiency.